Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

نویسندگان

چکیده

Transition metal dichalcogenides (TMDs) represent a class of semiconducting two-dimensional (2D) materials with exciting properties. In particular, defects in 2D-TMDs and their molecular interactions the environment can crucially affect physical chemical However, mapping spatial distribution reactivity liquid remains challenge. Here, we demonstrate large area reactive sulfur-deficient aqueous solutions by coupling single-molecule localization microscopy fluorescence labeling using thiol chemistry. Our method, reminiscent PAINT strategies, relies on specific binding fluorescent probes hosting group to sulfur vacancies, allowing an uncertainty down 15 nm. Tuning distance between fluorophore docking site allows us control Foster resonance energy transfer (FRET) process reveal grain boundaries line due local irregular lattice structure. We further characterize kinetics over range pH conditions, evidencing reversible adsorption subsequent transitioning irreversible basic conditions. methodology provides simple fast alternative for large-scale nonradiative 2D be used situ spatially resolved monitoring interaction agents that has general implications defect engineering condition.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides.

Two-dimensional crystals of semiconducting transition metal dichalcogenides absorb a large fraction of incident photons in the visible frequencies despite being atomically thin. It has been suggested that the strong absorption is due to the parallel band or 'band nesting' effect and corresponding divergence in the joint density of states. Here, we use photoluminescence excitation spectroscopy t...

متن کامل

Exciton radiative lifetimes in two-dimensional transition metal dichalcogenides.

Light emission in two-dimensional (2D) transition metal dichalcogenides (TMDs) changes significantly with the number of layers and stacking sequence. While the electronic structure and optical absorption are well understood in 2D-TMDs, much less is known about exciton dynamics and radiative recombination. Here, we show first-principles calculations of intrinsic exciton radiative lifetimes at lo...

متن کامل

Three-fold rotational defects in two-dimensional transition metal dichalcogenides

As defects frequently govern the properties of crystalline solids, the precise microscopic knowledge of defect atomic structure is of fundamental importance. We report a new class of point defects in single-layer transition metal dichalcogenides that can be created through 60° rotations of metal-chalcogen bonds in the trigonal prismatic lattice, with the simplest among them being a three-fold s...

متن کامل

Physical and chemical tuning of two-dimensional transition metal dichalcogenides.

The development of two-dimensional (2D) materials has been experiencing a renaissance since the adventure of graphene. Layered transition metal dichalcogenides (TMDs) are now playing increasingly important roles in both fundamental studies and technological applications due to their wide range of material properties from semiconductors, metals to superconductors. However, a material with fixed ...

متن کامل

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decade...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: ACS Nano

سال: 2021

ISSN: ['1936-0851', '1936-086X']

DOI: https://doi.org/10.1021/acsnano.1c00373